Differential tunneling spectroscopy simulations: Imaging surface states
Differential tunneling spectroscopy simulations: Imaging surface states
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差分隧道光谱模拟：成像表面状态
DOI：
10.1103/physrevb.71.085401
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发表时间：
2005
影响因子：
3.7
通讯作者：
A. Garcia
中科院分区：
文献类型：
--
作者：
W. Hofer;A. Garcia
提出了一种模拟金属和半导体表面扫描隧道谱的方法。该方法是基于表面和尖端的全电子结构。与现有的方法相比，它提供了额外的优势，表面和尖端的贡献，可以清楚地区分在随后的光谱。通过对贵金属（111）表面的表面态谱的分析，我们发现，只有在表面贡献方面，模拟结果才与实验数据符合得很好。我们的结论是，光谱模拟中的模型提示必须修改相比，在过去的地形模拟中使用的提示。
We present a method to simulate scanning tunneling spectra on metal and semiconductor surfaces. The method is based on the full electronic structure of the surface and the tip. Compared to existing methods, it provides the additional advantage that surface and tip contributions can be clearly distinguished in the ensuing spectrum. Analyzing the spectra of surface states on (111) noble metal surfaces, we find that the simulations agree well with experimental data only with respect to the surface contributions. We conclude that model tips in spectroscopy simulations have to be modified compared to the tips used in topography simulations in the past.