Above‐Hg1−x Cdx Te‐bandgap photoluminescence and interfacial channels in Hg1−x Cdx Te–CdTe heterostructure
Above‐Hg1−x Cdx Te‐bandgap photoluminescence and interfacial channels in Hg1−x Cdx Te–CdTe heterostructure
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DOI：
10.1002/pssb.201552515
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发表时间：
2016-02
期刊：
影响因子：
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通讯作者：
Liangqing Zhu;Lu Chen;Liangqing Zhu;Zhen Qi;Xiren Chen;Shaoling Guo;Li He;J. Shao
中科院分区：
文献类型：
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作者：
Liangqing Zhu;Lu Chen;Liangqing Zhu;Zhen Qi;Xiren Chen;Shaoling Guo;Li He;J. Shao
HgCdTe-CdTe异质结构对于基于HgCdTe的低维结构和红外探测器是重要的。然而，关于由钝化引入的寄生异质结构的研究非常有限，并且在电学特性范围内。在这项工作中，温度依赖的红外光致发光（PL）测量与1064-nm激光激发的CdTe钝化-HgCdTe界面上进行。除了常见的HgCdTe带边PL外，在HgCdTe带隙上方约100 meV处观察到异常PL特征，这些特征在低温下活跃，并伴随着近带边的淬灭。光反射和温度相关的PL分析表明，这种异常的功能是从HgCdTe中的电子和钝化层中的空穴之间的辐射复合。这样的通道与近带边缘的通道严重竞争，并且可能恶化检测器性能。
HgCdTe–CdTe heterostructures are important for HgCdTe‐based low‐dimensional structures and infrared detectors. However, studies concerning parasitic heterostructure introduced by the passivation are very limited and within electrical characterizations. In this work, temperature‐dependent infrared photoluminescence (PL) measurements are performed on CdTe–passivated‐HgCdTe interfaces with 1064‐nm laser excitation. Besides the common HgCdTe band‐edge PL, abnormal PL features are observed about 100 meV above the HgCdTe band gap, which are active at low temperatures and accompanied by the quench of near‐band‐edge ones. Photoreflectance and temperature dependent PL analysis indicate that such abnormal features are from radiative recombinations between electrons in HgCdTe and holes in the passivation layer. Such channels compete severely with the near‐band‐edge ones, and may deteriorate the detector performance.