Photoinduced quantum spin/valley Hall effect and its electrical manipulation in silicene

Photoinduced quantum spin/valley Hall effect and its electrical manipulation in silicene
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硅烯中光致量子自旋/谷霍尔效应及其电调控

DOI:
10.1063/1.4983819
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发表时间:
2017
影响因子:
3.2
通讯作者:
Zhao Heping
Zhao Heping
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Bao Hairui;Liao Wenhu;Zhang Xincheng;Yang Hong;Yang Xuexian;Zhao Heping

文献摘要

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基于Kubo线性响应定理,从理论上研究了垂直电场和非共振圆偏振光存在下硅烯的量子自旋/谷霍尔(QS/VH)电导率和纵向电导率。研究表明,电场和非共振光可以有效地将硅烯的电子结构调制为自旋简并态、(Floquet)拓扑绝缘态、谷自旋极化金属态和带绝缘态。在非共振光诱导的不同有效能量下,系统的自旋和谷霍尔电导率均表现出明显的阶跃结构,量子化值为(0,±1,±2)e2∕h,并与后门电压可控交错亚晶格电位对称。阶梯式量子自旋和谷霍尔电导率应随着温度的升高而趋于平滑。当系统纵向电导率为…
Based on the Kubo linear response theorem, we have investigated theoretically the quantum spin/valley Hall (QS/VH) conductivities and longitudinal conductivity of silicene in the presence of a perpendicular electric field and off-resonant circularly polarized light at the high frequency limit. It has been demonstrated that the electronic structure for silicene can be effectively modulated to be spin degenerate, (Floquet) topologically insulated, valley-spin polarized metallic, and band insulated states by the electric field and/or off-resonant light. Both the spin and valley Hall conductivities of the system for different effective energies induced by the off-resonant light behave a pronounced stepwise structure with the quantized values of (0, ±1, ±2)e2∕h and are symmetry with the back-gate voltage controllable staggered sublattice potential. The step-like quantum spin and valley Hall conductivities should be smoothed with the increase in the temperature. Wherever the system longitudinal conductivity exh...