Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces
Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces
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AlGaN 表面感应耦合等离子体蚀刻引起的 Al2O3/AlGaN/GaN 结构中的界面陷阱态
DOI：
10.1002/pssa.201431652
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
T. Hashizume
中科院分区：
文献类型：
--
作者：
Zenji Yatabe;J. Asubar;Taketomo Sato;T. Hashizume
研究了电感耦合等离子体（ICP）刻蚀AlGaN表面对Al_2O_3/AlGaN/GaN结构界面特性的影响。实验测得的电容-电压（C-V）特性进行了比较，考虑到在Al 2 O3/AlGaN界面的界面态密度的计算。作为一种补充方法，光辅助C-V方法利用能量小于GaN的带隙的光子也被用来探测位于AlGaN中间带隙附近的界面态密度。结果发现，AlGaN表面的ICP蚀刻显着增加在Al 2 O3/AlGaN界面的界面态密度。ICP刻蚀可能导致界面粗糙、化学键无序和AlGaN表面形成各种类型的缺陷复合物，包括氮空位相关缺陷，导致Al 2 O3/AlGaN界面处较高的界面态密度导致C-V曲线较差。
We have investigated the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting interface properties of the Al2O3/AlGaN/GaN structures. The experimentally measured capacitance–voltage (C–V) characteristics were compared with those calculated taking into account the interface states density at the Al2O3/AlGaN interface. As a complementary method, photoassisted C–V method utilizing photons with energies less than the bandgap of GaN was also used to probe the interface state density located near AlGaN midgap. It was found that the ICP etching of the AlGaN surface significantly increased the interface state density at the Al2O3/AlGaN interface. It is likely that ICP etching induced the interface roughness, disorder of chemical bonds and formation of various type of defect complexes including nitrogen‐vacancy‐related defects at the AlGaN surface, leading to poor C–V curve due to higher interface state density at the Al2O3/AlGaN interface.
影响因子：
6.7
作者：
Hashizume, T;Hasegawa, H
通讯作者：
Hasegawa, H
影响因子：
1.5
作者：
Mizue, Chihoko;Hori, Yujin;Hashizume, Tamotsu
通讯作者：
Hashizume, Tamotsu