Electrospun nanowire arrays for electronics and optoelectronics
Electrospun nanowire arrays for electronics and optoelectronics
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用于电子和光电子学的静电纺纳米线阵列
DOI：
10.1007/s40843-016-5026-4
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发表时间：
2016-03
影响因子：
8.1
通讯作者：
Zhai Tianyou
中科院分区：
文献类型：
--
作者：
Zheng Zhi;Gan Lin;Zhai Tianyou
Alignment of NWs (NWs) is the core issue for integrating NWs into nanodevices in future. This review made a concise retrospect on reported assembling methods and mainly emphasized on the electrospinning method and its developments, as well as the following applications of the aligned nanowire array (NWA) in electronics and optoelectronics. First, we classified reported assembling methods into three categories: “grow then place”, “place then grow” and “grow and place” (electrospinning method). Then, we focused on the electrospinning method and its modified method including field assisted method, rotating collector assisted method and near-field assisted methods, as well as their merits and defects, respectively. Next, we illustrated the applications of the NWs arrays fabricated by electrospinning in field effect transistors (FET), gas sensors, piezoelectric sensors and photodetectors. Finally, we made a short conclusion and prospection on electrospinning method. As an easy and cheap nanowire fabrication and alignment method, electrospinning has a bright future in one-dimensional materials based electronics and optoelectronics.摘要一维纳米线的有序化排列问题, 是决定其未来在高集成微纳电路中应用前景的关键因素. 本综述对目前能够实现纳米线有序化排列的技术方法做了一个简要的归纳, 重点阐述静电纺丝技术在纳米线制备和有序化排列方面的优势及相关技术和应用进展. 本文首先按技术特点将目前纳米线有序化排列技术大致分为“先生长后排列”, “先排列后生长”以及“边生长边排列(即静电纺丝技术)”三大类, 并对各类方法的优缺点进行了简要评述. 然后着重介绍静电纺丝技术及其相关技术进展, 并进一步展示了当前基于静电纺丝技术制备的纳米线阵列在微纳电极、场效应晶体管、传感器以及光探测器等方向的应用. 最后就静电纺丝技术的未来发展做了简要展望. 综上, 由于静电纺丝技术在一维材料制备及其有序化排列方面的简便性和低成本优势, 其必将在基于一维材料的电子学/光电子学领域具有广阔的应用前景.
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影响因子：
4.9
作者：
Siya Huang;Hui-fang Wu;K. Matsubara;Jing Cheng;W. Pan
通讯作者：
Siya Huang;Hui-fang Wu;K. Matsubara;Jing Cheng;W. Pan
通过玻璃毛细管排序银纳米线阵列：便携式、可重复使用且耐用的 SERS 基底
影响因子：
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通讯作者：
Yu, Shu-Hong
影响因子：
9.5
作者：
Hsu, Cheng-Liang;Li, Hsieh-Heng;Hsueh, Ting-Jen
通讯作者：
Hsueh, Ting-Jen
影响因子：
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作者：
Mengmeng Li;Y. Long;Dayong Yang;Jiashu Sun;H. Yin;Zhili Zhao;Wenhao Kong;Xingyu Jiang;Z. Fan
通讯作者：
Mengmeng Li;Y. Long;Dayong Yang;Jiashu Sun;H. Yin;Zhili Zhao;Wenhao Kong;Xingyu Jiang;Z. Fan
影响因子：
32.5
作者：
Sun, Chengliang;Shi, Jian;Wang, Xudong
通讯作者：
Wang, Xudong