Very high carrier mobility for high-performance CMOS on a Si(110) surface
Very high carrier mobility for high-performance CMOS on a Si(110) surface
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DOI：
10.1109/ted.2007.896372
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发表时间：
2007-06-01
影响因子：
3.1
通讯作者：
Ohmi, Tadahiro
中科院分区：
文献类型：
--
作者：
Teramoto, Akinobu;Hamada, Tatsufumi;Ohmi, Tadahiro
在这篇文章中，我们展示了在Si(110)表面上使用表面平坦化和自由基氧化的CMOS特性。与Si(100)表面相比，在清洗液中，Si(110)表面容易被OH-离子粗化。通过高温湿式氧化、自由基氧化和不使用碱性溶液的五步室温清洗作为预栅极氧化清洗的组合，实现了平坦化的Si(110)表面。在平坦表面上，在Si(110)表面上的p沟道MOSFET的电流驱动能力是在Si(100)表面上的3倍，并且与没有平整工艺和无碱清洗的Si(110)表面上的n沟道MOSFET相比，可以提高其电流驱动能力。在平坦的Si(110)表面上的n沟道MOSFET和p沟道MOSFET的1/f噪声比在Si(100)表面上的传统n沟道MOSFET的1/f噪声小一个数量级。因此，可以在平坦的Si(110)表面上实现高速、低闪烁噪声的p沟道MOSFET。此外，可以实现平衡p沟道和n沟道MOSFET的电流驱动能力的CMOS实现(平衡的CMOS)。这些优点在模拟/数字混合信号电路中非常有用。
In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH- ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregate-oxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(110) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of,magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. Thus, a highspeed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits.