Impact of few electron phenomena on floating-gate memory reliability
Impact of few electron phenomena on floating-gate memory reliability
复制标题
少电子现象对浮栅存储器可靠性的影响
DOI：
10.1109/iedm.2004.1419320
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
S. Deleonibus
中科院分区：
文献类型：
--
作者：
Gabriel Molas;D. Deleruyelle;B. D. Salvo;Gérard Ghibaudo;M. Gely;S. Jacob;D. Lafond;S. Deleonibus
在本文中，我们给出了一个定量评估的浮动栅（FG）的存储器在十纳米范围内，由于减少集体现象和单电子随机行为的主导地位的内在可靠性限制。提出了一个新的模型，定量预测的存储器保持时间和编程窗口的本征分散。在超大规模的存储器设备（下降到30纳米/SPL倍/30纳米），无论是连续的多晶硅或硅-双晶FG上获得的实验结果，也被提出。最后，推断未来几代闪存的固有可靠性限制。
In this paper we give a quantitative evaluation of the intrinsic reliability limits of floating gate (FG) memories in the deca-nanometer range, due to the reduction of collective phenomena and to the dominance of single electron stochastic behaviours. A new model that quantitatively predicts the intrinsic dispersions of the memory retention time and programming window is proposed. Experimental results obtained on ultra-scaled memory devices (down to 30nm /spl times/ 30nm), with either continuous poly-Si or Si-nanocrystal FG, are also presented. Finally, extrapolations on the intrinsic reliability limits of future generations of Flash memories are done.