Flexible Organic Transistor Memory Devices
Flexible Organic Transistor Memory Devices
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DOI：
10.1021/nl1009662
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发表时间：
2010-08-01
期刊：
影响因子：
10.8
通讯作者：
Lee, Jang-Sik
中科院分区：
文献类型：
--
作者：
Kim, Soo-Jin;Lee, Jang-Sik
基于嵌入自组装金纳米粒子（Au(NP)）的有机薄膜晶体管，在塑料衬底上开发了柔性非易失性有机存储器件。有机存储器件在编程/擦除操作方面表现出良好的可编程存储特性，从而产生可控和可靠的阈值电压偏移。此外，耐久性、数据保留和弯曲循环测量证实，柔性存储器件具有良好的电气可靠性和机械稳定性。存储器件由溶液处理的有机介质层/金属纳米颗粒和低温处理的有机晶体管组成。因此，这种方法可以潜在地应用于先进的柔性/塑料电子器件以及集成有机器件电路。
The flexible nonvolatile organic memory devices were developed on the plastic substrates based on the organic thin-film transistors embedding self-assembled gold nanoparticles (Au(NP)). The organic memory devices exhibited good programmable memory characteristics with respect to the program/erase operations, resulting in controllable and reliable threshold voltage shifts. Additionally, the endurance, data retention, and bending cyclic measurements confirmed that the flexible memory devices exhibited good electrical reliability as well as mechanical stability. The memory devices were composed of the solution-processed organic dielectric layers/metallic nanoparticles and the low-temperature processed organic transistors. Therefore, this approach could potentially be applied to advanced flexible/plastic electronic devices as well as integrated organic device circuits.