Na-promoted oxidation of Si: The specific oxidation mechanism.
Na-promoted oxidation of Si: The specific oxidation mechanism.
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Na 促进的 Si 氧化：特定的氧化机制。
DOI：
10.1103/physrevb.49.2943
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Margaritondo
中科院分区：
文献类型：
--
作者：
Faraci;La Rosa S;Pennisi;Margaritondo
钠包覆层对硅室温氧化速率的显著提高归因于碱金属的旁观催化作用。相反，我们显示了Na在亚化学计量的中间氧化态中结合氧原子参与氧化过程的证据。这导致半导体悬垂键在表面优先饱和，并随后促进氧化物的生长。事实上，我们已经检测到，当与氧原子形成杂化构型时，Na 2p光发射的化学位移。
The dramatic enhancement of the silicon room-temperature oxidation rate by a Na overlayer has been attributed to the spectator catalytic action of the alkali metal. In contrast, we show evidence that Na participates in the oxidation process binding an oxygen atom in a substoichiometric intermediate oxidation state. This causes preferential saturation of the semiconductor dangling bonds on the surface and a subsequent promotion of the oxide growth. We have, in fact, detected the Na 2p photoemission chemical shifts when bonds with an oxygen atom are established in a hybrid configuration.