Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing
Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing
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DOI：
10.1038/s41563-018-0248-5
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发表时间：
2019-02-01
期刊：
影响因子：
41.2
通讯作者：
Lu, Wei D.
中科院分区：
文献类型：
--
作者：
Zhu, Xiaojian;Li, Da;Lu, Wei D.
离子-电子耦合效应为器件和电路的发展提供了诱人的机会。特别是，层状的二维材料，如MoS2，提供了高度各向异性的离子传输特性，促进了受控的离子迁移和器件之间的有效离子耦合。在这里，我们报道了MoS_2薄膜的可逆调制，这种调制与局域2H-1T‘相变相一致，通过电场控制Li+离子的迁移，其中局域Li+离子浓度的增加/减少导致了2H(半导体)和1T’(金属)相之间的转变。由此产生的设备表现出良好的记忆行为，并可以通过局部离子交换直接相互耦合，自然地导致在生物学中观察到的突触竞争和突触合作效应。这些结果证明了通过场驱动离子过程直接调制二维材料的潜力，并可能导致未来基于离子-电子耦合效应的电子和能量器件以及人工神经网络的生物理论性实现。
Coupled ionic-electronic effects present intriguing opportunities for device and circuit development. In particular, layered two-dimensional materials such as MoS2 offer highly anisotropic ionic transport properties, facilitating controlled ion migration and efficient ionic coupling among devices. Here, we report reversible modulation of MoS2 films that is consistent with local 2H-1T' phase transitions by controlling the migration of Li+ ions with an electric field, where an increase/decrease in the local Li+ ion concentration leads to the transition between the 2H (semiconductor) and 1T' (metal) phases. The resulting devices show excellent memristive behaviour and can be directly coupled with each other through local ionic exchange, naturally leading to synaptic competition and synaptic cooperation effects observed in biology. These results demonstrate the potential of direct modulation of two-dimensional materials through field-driven ionic processes, and can lead to future electronic and energy devices based on coupled ionic-electronic effects and biorealistic implementation of artificial neural networks.