Investigation of the GaN-on-GaAs interface for vertical power device applications
Investigation of the GaN-on-GaAs interface for vertical power device applications
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DOI：
10.1063/1.4887139
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发表时间：
2014-07
影响因子：
3.2
通讯作者：
J. Möreke;M. Uren;S. Novikov;C. T. Foxon;S. H. Vajargah;D. Wallis;C. Humphreys;S. Haigh;A. Al-Khalidi;E. Wasige;I. Thayne;M. Kuball
中科院分区：
文献类型：
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作者：
J. Möreke;M. Uren;S. Novikov;C. T. Foxon;S. H. Vajargah;D. Wallis;C. Humphreys;S. Haigh;A. Al-Khalidi;E. Wasige;I. Thayne;M. Kuball
通过分子束外延将 GaN 层生长到 (111) GaAs 上。文献中提出了 GaN 和 GaAs 材料导带之间的最小能带偏移，提高了将 GaN-on-GaAs 用于垂直功率器件应用的可能性。然而，GaN/GaAs 异质结构的 I-V 和 C-V 测量产生了整流结，即使结的两侧都重度掺杂了 n 型掺杂剂。透射电子显微镜分析进一步证实了创建 GaN/GaAs 欧姆界面的挑战，显示 GaN 层中的高密度位错，并表明由于氮等离子体蚀刻 GaAs、氮扩散或 Ga 熔化到 GaAs 衬底中而导致 GaN/GaAs 界面粗糙化。
GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.