Ion-beam-produced damage and its stability in AlN films
Ion-beam-produced damage and its stability in AlN films
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DOI：
10.1063/1.1501746
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发表时间：
2002-10-01
影响因子：
3.2
通讯作者：
Manasreh, MO
中科院分区：
文献类型：
--
作者：
Kucheyev, SO;Williams, JS;Manasreh, MO
采用卢瑟福后向散射/通道光谱法和横断面透射电镜技术，研究了在室温和液氮温度（RT和LN2）下，300 keV Au-197（+）离子轰击下生长在蓝宝石衬底上的单晶纤锌矿AlN薄膜的结构特征。结果表明，离子束产生的AlN缺陷具有极强的动态退火特性。在LN2中，即使是非常大剂量的keV重离子也没有观察到晶格非晶化。从LN2到RT辐照温度的升高对AlN中稳定结构损伤的产生影响相对较小。与x≤0.6的AlxGa1-xN相比，AlN在晶体体中既没有表现出损伤饱和（低于随机水平），也没有表现出优先的表面无序。结果还表明，高剂量keV重离子轰击产生的AlN结构晶格紊乱在高达1000℃的高温快速退火下是稳定的。(C) 2002年美国物理研究所。
Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV Au-197(+) ions at room and liquid-nitrogen temperatures (RT and LN2) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN2. An increase in irradiation temperature from LN2 to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of AlxGa1-xN with xless than or equal to0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000 degreesC. (C) 2002 American Institute of Physics.