Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers
Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers
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DOI：
10.1021/nl3045553
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发表时间：
2013-03-01
期刊：
影响因子：
10.8
通讯作者：
Hersam, Mark C.
中科院分区：
文献类型：
--
作者：
Sangwan, Vinod K.;Jariwala, Deep;Hersam, Mark C.
石墨烯在集成电路中的全部潜力只能通过可靠的超薄高 kappa 顶栅电介质来实现。在这里，我们报告了石墨烯电介质击穿特性的首次统计分析，它允许同时优化栅极电容以及描述大面积均匀性和介电强度的关键参数。特别是，通过原子层沉积生长并由分子薄苝-3,4,9,10-四甲酸二酐有机单层作为晶种的垂直异质和侧向均质的Al2O3和HfO2叠层表现出高均匀性（威布尔形状参数β> 25）和大击穿强度（威布尔尺度参数，E-BD> 7 MV/cm），与在Si衬底上生长的控制电介质相当。
The full potential of graphene in integrated circuits can only be realized with a reliable ultrathin high-kappa top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogeneous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter beta > 25) and large breakdown strengths (Weibull scale parameter, E-BD > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates.