Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered MoS2
Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered MoS2
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DOI：
10.1103/physrevb.102.245424
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发表时间：
2020-12-24
影响因子：
3.7
通讯作者：
Dobrosavljevic, Vladimir
中科院分区：
文献类型：
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作者：
Moon, Byoung Hee;Han, Gang Hee;Dobrosavljevic, Vladimir
强电子-电子相互作用在驱动二维金属-绝缘体跃迁中的主导作用一直存在争议，但其明确的实验证明仍然不可用。在这里，我们研究了密度驱动的金属-绝缘体转变附近的少层MoS2材料的有限温度输运行为，揭示了以前被忽视的强相关电子系统的普遍特征。我们的标度分析，基于Wigner-Mott理论观点，最终证明了跃迁是由强电子-电子相互作用驱动的，而不是无序的，这与其他Mott系统中看到的惊人相似。我们的研究结果提供了令人信服的证据，证明过渡金属二硫族化物提供了一个理想的试验场，并应为强相关物理学的研究开辟了一条令人兴奋的途径。
The dominant role of strong electron-electron interactions in driving two-dimensional metal-insulator transitions has long been debated, but its clear experimental demonstration is still not available. Here, we examine the finite-temperature transport behavior of few-layered MoS2 material in the vicinity of the density-driven metal-insulator transition, revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground, and should open an exciting avenue for the study of strong correlation physics.