Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation
Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation
复制标题
DOI：
10.1109/led.2014.2362768
复制
发表时间：
2014-12-01
影响因子：
4.9
通讯作者：
Yano, Hiroshi
中科院分区：
文献类型：
--
作者：
Okamoto, Dai;Sometani, Mitsuru;Yano, Hiroshi
我们提出了另一种制备高沟道迁移率的4H-碳化硅金属氧化物半导体场效应晶体管(MOSFET)的工艺。用BN平面扩散源进行热退火，将B原子引入到SiO_2/4H-SiC界面。B扩散有效地降低了4H-SiCMOSFET导带边缘的界面态密度，4H-SiCMOSFET的场效应迁移率峰值为102 cm(2)/vs。获得的高沟道迁移率不能用反掺杂来解释，因为B原子在4H-SiC中起受主作用。我们认为，SiO_2界面结构的变化可能是陷阱密度降低和沟道迁移率增强的原因。
We propose another process for fabricating 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO2/4H-SiC interface by thermal annealing with a BN planar diffusion source. The interface state density near the conduction band edge of 4H-SiC was effectively reduced by the B diffusion and the fabricated 4H-SiC MOSFETs showed a peak field-effect mobility of 102 cm(2)/Vs. The obtained high channel mobility cannot be explained by counter doping because B atoms act as acceptors in 4H-SiC. We suggest that the interfacial structural change of SiO2 may be responsible for the reduced trap density and enhanced channel mobility.