Effects of Zn2 substitution on the sintering behaviour and dielectric properties of Li2Mg1-xZnxSiO4 ceramics
Effects of Zn2 substitution on the sintering behaviour and dielectric properties of Li2Mg1-xZnxSiO4 ceramics
复制标题
Zn2取代对Li2Mg1-xZnxSiO4陶瓷烧结行为和介电性能的影响
DOI：
10.1007/s00339-019-2712-8
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发表时间：
2019
影响因子：
2.7
通讯作者：
Su Hua
中科院分区：
文献类型：
--
作者：
Jing Xiaolin;Tang Xiaoli;Tang Weihuan;Jing Yulan;Li Yuanxun;Su Hua
硅酸盐材料由于其低介电常数和低损耗，近年来得到了蓬勃发展，是微波集成电路中低温烧成介质材料的基础。本工作中，Zn ~（2+）逐渐取代Mg ~（2+），使Li_2MgSiO_4的烧结温度降低，微波介电性能提高。采用固相反应法制备了Li 2 Mg 1 − xZnxSiO 4（x= 0，0.2，0.4，0.6，0.8和1.0）粉体。为了将烧结温度降低至约900 °C，使用3重量%的Li 2 O-B2 O3-SiO2-CaO-Al 2 O3玻璃作为烧结助剂。XRD图谱表明材料的主晶相为Li 2（Mg，Zn）SiO 4。当Zn 2+取代量增加到0.4以上时，出现了一种新的非预期的ZnxSiO 4晶相。SEM显微照片表明，当x = 0.4时，显微组织最均匀。当x = 0.4时，Q × f值和相对密度也达到峰值。此外，掺3wt%LBSCA的Li2Mg0.6Zn0.4SiO4陶瓷在900 °C烧结时表现出优异的介电性能，εr= 5.89，Q ×f= 44，787 GHz，τf= − 71.65 ppm/°C。该材料表现出低的相对介电常数和低的介电损耗，因此可能是一个潜在的候选人的LTCC器件的应用。
Silicates, the basis on which low-temperature-fired dielectric materials widely studied for applications in the fields of microwave integrated circuits, have been developing vigorously owing to their low dielectric constants and tangent loss values. In this work, Zn2+was gradually substituted to Mg2+to make the sintering temperature decreased and enhance the microwave dielectric properties of Li2MgSiO4. Li2Mg1−xZnxSiO4(x= 0, 0.2, 0.4, 0.6, 0.8 and 1.0) powders were prepared through solid-state reaction. Aiming to decrease the sintering temperature to approximately 900 °C, 3 wt% Li2O–B2O3–SiO2–CaO–Al2O3glass was used as a sintering aid. The XRD patterns made it clear that the major crystalline phase of the materials was Li2(Mg,Zn)SiO4. A new unexpected crystalline phase of ZnxSiO4appeared when the amount of Zn2+substituted increased to more than 0.4. SEM micrographs demonstrated that whenx= 0.4, the most homogeneous microstructure appeared. Meanwhile, theQ×fvalue and the relative density also reached to their peaks whenx= 0.4, respectively. Moreover, 3 wt% LBSCA-doped Li2Mg0.6Zn0.4SiO4ceramics exhibited excellent dielectric properties ofεr= 5.89,Q×f= 44,787 GHz andτf= − 71.65 ppm/°C when sintered at 900 °C. The material exhibited low relative permittivity and low dielectric loss and could thus be a potential candidate for LTCC device applications.