Hydrogen bonding effects on the surface structure and photoelectrochemical properties of nanostructured SnO2 electrodes modified with porphyrin and fullerene composites.
Hydrogen bonding effects on the surface structure and photoelectrochemical properties of nanostructured SnO2 electrodes modified with porphyrin and fullerene composites.
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DOI：
10.1021/jp0537409
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发表时间：
2005-09
期刊：
影响因子：
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通讯作者：
H. Imahori;Jia‐cheng Liu;H. Hotta;Aiko Kira;T. Umeyama;Y. Matano;Guifeng Li;S. Ye;Marja Isosomppi;N. Tkachenko;H. Lemmetyinen
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文献类型：
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作者：
H. Imahori;Jia‐cheng Liu;H. Hotta;Aiko Kira;T. Umeyama;Y. Matano;Guifeng Li;S. Ye;Marja Isosomppi;N. Tkachenko;H. Lemmetyinen
在氧化铟锡和纳米结构 SnO2 电极上有或没有氢键的卟啉和富勒烯复合材料的混合膜中，研究了氢键对表面结构、光物理性质和光电化学的影响。与没有氢键的参考系统相比，用具有氢键的卟啉和富勒烯复合材料的混合膜修饰的纳米结构 SnO2 电极表现出高效的光电流产生。原子力显微镜、红外反射吸收、紫外-可见吸收光谱以及时间分辨荧光寿命和瞬态吸收光谱测量揭示了电极表面薄膜中卟啉和/或C60部分之间氢键形成相关的表面结构与光物理和光电化学性质之间的关系。这些结果表明，氢键是在纳米结构半导体电极上制造供体和受体复合材料的一种非常有前途的方法，该电极表现出高光电化学性能。
Hydrogen bonding effects on surface structure, photophysical properties, and photoelectrochemistry have been examined in a mixed film of porphyrin and fullerene composites with and without hydrogen bonding on indium tin oxide and nanostructured SnO2 electrodes. The nanostructured SnO2 electrodes modified with the mixed films of porphyrin and fullerene composites with hydrogen bonding exhibited efficient photocurrent generation compared to the reference systems without hydrogen bonding. Atomic force microscopy, infrared reflection absorption, and ultraviolet-visible absorption spectroscopies and time-resolved fluorescence lifetime and transient absorption spectroscopic measurements disclosed the relationship between the surface structure and photophysical and photoelectrochemical properties relating to the formation of hydrogen bonding between the porphyrins and/or the C60 moieties in the films on the electrode surface. These results show that hydrogen bonding is a highly promising methodology for the fabrication of donor and acceptor composites on nanostructured semiconducting electrodes, which exhibit high photoelectrochemical properties.