Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element
Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element
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DOI：
10.1007/s10854-007-9408-0
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发表时间：
2008-09-01
影响因子：
2.8
通讯作者：
Wiebicke, Evi
中科院分区：
文献类型：
--
作者：
Kunets, Vasyl P.;Dobbert, Julia;Wiebicke, Evi
采用赝晶Al（0.3）Ga（0.7）As/GaAs/In（y）Ga（1-y）As（0.2）材料制作了5 μ m见方的高灵敏度、低噪声、高热稳定性的微霍尔传感器
Micro-Hall sensors with high sensitivity, low noise, and high thermal stability, 5 mu m square, are fabricated using pseudomorphic Al(0.3)Ga(0.7)As/GaAs/In (y) Ga(1-y) As (0.2