Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots
Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots
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DOI：
10.1063/1.5144959
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发表时间：
2019-12
期刊：
影响因子：
5.6
通讯作者：
K. Kuruma;Y. Ota;M. Kakuda;S. Iwamoto;Y. Arakawa
中科院分区：
文献类型：
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作者：
K. Kuruma;Y. Ota;M. Kakuda;S. Iwamoto;Y. Arakawa
具有高品质因子的光子晶体纳米腔由于其强的空间和时间光限制能力而受到人们的广泛关注。由此产生的增强的光-物质相互作用有利于各种光子应用，从片上光通信到传感。然而，目前可实现的Q因子的有源PhC纳米腔，其中嵌入有源发射器内部，是远远低于那些无源结构，因为大的光学损耗，大概源于光散射的结构缺陷和/或光学反射。在这里，我们证明了一个显着的改善的Q值高达~ 160，000的GaAs有源PHC nanocavities使用基于硫的表面钝化技术。该值是有史以来报道的具有半导体量子点的任何活性PhC纳米腔的最高值。表面钝化的腔也表现出降低的Q因子和腔谐振波长的变化。我们发现，在腔性能的改善大概是由于抑制光吸收在表面的PhC的主机材料通过执行一组PL测量在光谱和时域。利用表面钝化技术，我们还展示了一个强耦合的单量子点-腔系统，该系统基于具有~ 100，000的高Q因子的PhC纳米腔。这些结果将为先进的量子点为基础的腔量子电动力学和GaAs微/纳米光子应用包含有源发射器铺平道路。
Photonic crystal (PhC) nanocavities with high quality (Q) factors have attracted much attention because of their strong spatial and temporal light confinement capability. The resulting enhanced light-matter interactions are beneficial for diverse photonic applications, ranging from on-chip optical communications to sensing. However, currently achievable Q factors for active PhC nanocavities, which embed active emitters inside, are much lower than those of the passive structures because of large optical loss, presumably originating from light scattering by structural imperfections and/or optical absorptions. Here, we demonstrate a significant improvement of Q factors up to ~160,000 in GaAs active PhC nanocavities using a sulfur-based surface passivation technique. This value is the highest ever reported for any active PhC nanocavities with semiconductor quantum dots. The surface-passivated cavities also exhibit reduced variation in both Q factors and cavity resonant wavelengths. We find that the improvement in the cavity performance presumably arises from suppressed light absorption at the surface of the PhC's host material by performing a set of PL measurements in spectral and time domains. With the surface passivation technique, we also demonstrate a strongly-coupled single quantum dot-cavity system based on a PhC nanocavity with a high Q factor of ~100,000. These results will pave the way for advanced quantum dot-based cavity quantum electrodynamics and for GaAs micro/nanophotonic applications containing active emitters.