Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface
Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface
复制标题
DOI：
10.1021/acsphotonics.8b00375
复制
发表时间：
2018-08-01
期刊：
影响因子：
7
通讯作者：
Ohshima, Takeshi
中科院分区：
文献类型：
--
作者：
Sato, Shin-ichiro;Honda, Tomoya;Ohshima, Takeshi
单光子源是实现量子通信和光量子计算机应用的关键技术之一。本文介绍了室温下电学控制4 H-SiC表面缺陷单光子发射的方法。制作了平面型4 H-SiC p（+）nn（+）二极管，并通过场氧化工艺在n型外延层表面形成了类似SPS的缺陷。利用自制的共焦显微镜研究了SPS的光子发射特性。结果表明，SPS的电致发光（EL）强度可以通过正向偏压的少数载流子注入来控制，而SPS的光致发光（PL）强度可以通过反向偏压来控制。在EL和PL光谱中没有观察到由于施加偏压而引起的显著变化，表明缺陷结构和电荷状态没有改变。还演示了通过切换反向偏置电压的PL强度调制。
Single photon source (SPS) providing nonclassical light states on demand is one of the key technologies for the application of quantum communication and optical quantum computer. In this paper, room temperature electrical control of single photon emission from defects at 4H-SiC surface is presented. Planar-type 4H-SiC p(+)nn(+) diodes are fabricated and defects that act as SPS are formed on the surface of n-type epi-layer by field oxidation process. The photon emission properties of SPSs are investigated using a home-built confocal microscopy. Results show that the electroluminescence (EL) intensity of SPS can be controlled by minority carrier injection of forward bias voltages, while the photoluminescence (PL) intensity of SPS can be controlled by reverse bias voltages. No significant variations due to applied bias voltages are observed in the EL and PL spectra, indicating the defect structure and charge state are unchanged. The PL intensity modulation by switching a reverse bias voltage is also demonstrated.