J.Nishizawa, T.Kurabayashi: "Development of GaAs Epitaxy -from bulk growth to ultra-thin film growth for nano-structure devices"8^<th> Russian Conference "Gallium Arsenide and III-V Group Related Compounds" GaAs-2002, 1-4 October 2002. 9-11 (2002)
J.Nishizawa, T.Kurabayashi: "Development of GaAs Epitaxy -from bulk growth to ultra-thin film growth for nano-structure devices"8^<th> Russian Conference "Gallium Arsenide and III-V Group Related Compounds" GaAs-2002, 1-4 October 2002. 9-11 (2002)
复制标题
J.Nishizawa、T.Kurabayashi：“砷化镓外延的发展 - 从体生长到纳米结构器件的超薄膜生长”第 8 届俄罗斯会议“砷化镓和 III-V 族相关化合物” GaAs-2002
DOI：
--
复制
发表时间：
--
期刊：
影响因子：
--
通讯作者：
中科院分区：
文献类型：
--
作者：
