Epitaxial Mn2.5Ga thin films with giant perpendicular magnetic anisotropy for spintronic devices
Epitaxial Mn2.5Ga thin films with giant perpendicular magnetic anisotropy for spintronic devices
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DOI：
10.1063/1.3108085
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发表时间：
2009-03-23
影响因子：
4
通讯作者：
Miyazaki, Terunobu
中科院分区：
文献类型：
--
作者：
Wu, Feng;Mizukami, Shigemi;Miyazaki, Terunobu
我们报道了通过磁控溅射在 Cr/MgO 单晶衬底上沉积的 Mn2.5Ga 薄膜的外延生长和磁性能。 X射线衍射结果揭示了外延关系为Mn2.5Ga(001)[100]平行于Cr(001)[110]平行于MgO(001)[100]。 (002)和(011)超晶格峰的存在表明薄膜结晶成DO22有序结构。研究发现垂直磁各向异性 (PMA) 特性与 DO22 化学有序程度有关。对于具有最高化学有序参数（S=0.8）的薄膜，可以获得巨大的PMA（K-u（eff）=1.2x10（7）erg/cm（3））和低饱和磁化强度（M-s=250 emu/cm（3））。
We report on epitaxial growth and magnetic properties of Mn2.5Ga thin films, which were deposited on Cr/MgO single crystal substrates by magnetron sputtering. X-ray diffraction results revealed the epitaxial relationships as Mn2.5Ga(001)[100]parallel to Cr(001)[110]parallel to MgO(001)[100]. The presence of (002) and (011) superlattice peaks indicates that the films were crystallized into DO22 ordered structures. The perpendicular magnetic anisotropy (PMA) properties were found to be related to the extent of DO22 chemical ordering. A giant PMA (K-u(eff)=1.2x10(7) erg/cm(3)) and low saturation magnetization (M-s=250 emu/cm(3)) can be obtained for the film with highest chemical ordering parameter (S=0.8).