Punch-through currents and floating strip potentials in silicon detectors

Punch-through currents and floating strip potentials in silicon detectors
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硅探测器中的击穿电流和浮带电势

DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
L. Evensen
L. Evensen
中科院分区：
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文献类型：
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作者：
J. Ellison;G. Hall;S. Roe;R. Wheadon;B. S. Avset;L. Evensen

文献摘要

被引文献

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在硅微带漂移探测器表面相邻p/sup +/带之间观察到穿通电流。浮置带电位的测量表明，p/sup +/带获得的电压使得穿通电流和漏电流相等且方向相反。影响穿通效应的阈值的因素进行了比较与一个简单的计算机模型，并预测的变化与带间间隙被发现是在合理的协议与测量值的各种检测器。>
Punch-through currents flowing between adjacent p/sup +/ strips on the surface of silicon microstrip drift detectors have been observed. Measurements of the floating strip potential have shown that a p/sup +/ strip acquires a voltage such that the punch-through current and the leakage current are equal and opposite. The factors influencing the threshold for the punch-through effect have been compared with a simple computer model, and the predicted variation with the interstrip gap is found to be in reasonable agreement with measured values for a variety of detectors. >