On the Origin of Contact Resistances of Organic Thin Film Transistors
On the Origin of Contact Resistances of Organic Thin Film Transistors
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DOI：
10.1002/adma.201201311
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发表时间：
2012-08-02
影响因子：
29.4
通讯作者：
Knipp, Dietmar
中科院分区：
文献类型：
--
作者：
Marinkovic, Marko;Belaineh, Dagmawi;Knipp, Dietmar
提出了一个模型，描述了小分子有机薄膜晶体管在顶部和底部漏源/源触点结构下与栅极电压相关的接触电阻和与通道长度相关的载流子迁移率。
A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration.