Composition Profile of ZnSe/BeTe Multiple Quantum Well Structures Studied by Cross-Sectional Scanning Tunneling Microscopy
Composition Profile of ZnSe/BeTe Multiple Quantum Well Structures Studied by Cross-Sectional Scanning Tunneling Microscopy
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DOI：
10.1143/jjap.44.l1337
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发表时间：
2005-10
影响因子：
1.5
通讯作者：
I. Yamakawa;Y. Akanuma;B. Li;R. Akimoto;A. Nakamura
中科院分区：
文献类型：
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作者：
I. Yamakawa;Y. Akanuma;B. Li;R. Akimoto;A. Nakamura
利用截面扫描隧道显微镜和X射线衍射测量研究了ZnSe/BeTe多量子威尔斯中具有Ⅱ型能带取向的ZnSe/BeTe界面的组分分布。填充态和空态图像显示，在ZnSe/BeTe界面上沿生长方向沿着2-4个单层范围内存在Zn-Te和Be-Se键。ZnSe层和BeTe层之间的过渡层由BeZnSeTe四元合金构成。X射线衍射分析证实了在ZnSe/BeTe界面处存在宽度为0.40 nm的（ZnTe）0.58（BeSe）0.42过渡层。
The compositional distribution of ZnSe/BeTe interfaces in ZnSe/BeTe multiple quantum wells with a type-II band alignment has been investigated using cross-sectional scanning tunneling microscopy and X-ray diffraction measurements. The filled- and empty-state images revealed that Zn–Te and Be–Se bonds exist at the ZnSe/BeTe interface within the range of 2–4 monolayers along the growth direction. The transition layer between the ZnSe layer and the BeTe layer is composed of the BeZnSeTe quaternary alloy. X-ray diffraction analysis confirmed the existence of a (ZnTe)0.58(BeSe)0.42 transition layer with a width of 0.40 nm at the ZnSe/BeTe interface.