Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
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DOI：
10.1143/jjap.43.839
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发表时间：
2004-02
影响因子：
1.5
通讯作者：
K. Okamoto;Jungkwon Choi;Y. Kawakami;M. Terazima;T. Mukai;S. Fujita
中科院分区：
文献类型：
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作者：
K. Okamoto;Jungkwon Choi;Y. Kawakami;M. Terazima;T. Mukai;S. Fujita
首次利用激光共聚焦扫描显微镜对InGaN/GaN单量子威尔斯阱（SQW）进行了亚微米级的光致发光（PL）研究。我们发现了岛状的空间不均匀性的PL强度和光谱小到100-200 nm。所获得的PL图像的空间分辨率远小于室温下载流子在有源层中的扩散长度。
Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.