Effect of hydrogen on chemical vapor deposition growth of graphene on Au substrates
Effect of hydrogen on chemical vapor deposition growth of graphene on Au substrates
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DOI：
10.7567/1347-4065/ab19ae
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发表时间：
2019-06
影响因子：
1.5
通讯作者：
Tomo-o Terasawa;Takanobu Taira;S. Yasuda;Seiji Obata;K. Saiki;H. Asaoka
中科院分区：
文献类型：
--
作者：
Tomo-o Terasawa;Takanobu Taira;S. Yasuda;Seiji Obata;K. Saiki;H. Asaoka
在铜和金等低碳溶解度基底上进行化学气相沉积（CVD）有望大规模选择性地生长单层石墨烯。通常添加氢气来控制铜上石墨烯的域尺寸，而金不需要氢气，因为氩对氧化呈惰性。应揭示 H2 的影响以提高金上石墨烯的质量。在这里，我们使用原位辐射模式光学显微镜报告了 H2 对金基板上石墨烯 CVD 生长的影响。原位观察和异位拉曼光谱表明，是否供应H2强烈影响Au上石墨烯的生长速率、热辐射对比度和压缩应变。我们将这些特征归因于 Au(001) 的表面重建取决于 H2 的供应。我们的结果对于在金上实现高质量石墨烯生长以供未来应用至关重要。
Chemical vapor deposition (CVD) on substrates with low C solubility such as Cu and Au is promising to grow monolayer graphene selectively in a large scale. Hydrogen is often added to control the domain size of graphene on Cu, while Au does not require H2 since Ar is inert against oxidation. The effect of H2 should be revealed to improve the quality of graphene on Au. Here we report the effect of H2 on the CVD growth of graphene on Au substrates using in situ radiation-mode optical microscopy. The in situ observation and ex situ Raman spectroscopy revealed that whether H2 was supplied or not strongly affected the growth rate, thermal radiation contrast, and compressive strain of graphene on Au. We attributed these features to the surface reconstruction of Au(001) depending on H2 supply. Our results are essential to achieve the graphene growth with high quality on Au for future applications.