In situ observation of phase transition and the transition‐induced step bunching on InAs(001) surfaces by scanning electron microscopy
In situ observation of phase transition and the transition‐induced step bunching on InAs(001) surfaces by scanning electron microscopy
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通过扫描电子显微镜原位观察 InAs(001) 表面的相变和相变引起的阶跃聚束
DOI：
10.1063/1.113873
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Y. Horikoshi
中科院分区：
文献类型：
--
作者：
H. Yamaguchi;Y. Homma;Y. Horikoshi
用扫描电镜直接观察了As压力下InAs（001）表面相变过程中的重构和阶梯结构变化。用晶格气体模型进行蒙特卡罗模拟，可以清楚地看到与一阶相变相对应的畴形成。台阶结构在很大程度上取决于表面重构和错取向方向。这是第一次在化合物半导体表面上观察到相变引起的阶跃聚束。
The reconstruction and the step structure change during the phase transition on an InAs(001) surface under As pressure is observed directly by using scanning electron microscopy. The domain formation corresponding to the first‐order phase transition is clearly seen as predicted by Monte Carlo simulation with a lattice gas model. It is also seen that the step structure largely depends on the surface reconstruction and the misorientation direction. This gives the first observation of phase‐transition‐induced step bunching on a compound semiconductor surface.