MXene-GaN van der Waals Heterostructures for High-Speed Self-Driven Photodetectors and Light-Emitting Diodes
MXene-GaN van der Waals Heterostructures for High-Speed Self-Driven Photodetectors and Light-Emitting Diodes
复制标题
用于高速自驱动光电探测器和发光二极管的 MXene-GaN 范德华异质结构
DOI：
10.1002/aelm.202000955
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Y.H. Gao
中科院分区：
文献类型：
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作者：
C.J. Yi;Y.B. Chen;Z. Kang;Y.N. Ma;Y. Yue;W.J. Liu;M. Zhu;Y.H. Gao
二维过渡金属碳化物和氮化物由于具有良好的导电性、高透过率和功函数可调等优点，在光电子学领域，特别是在MXEn半导体器件中显示出巨大的应用前景。本工作制备并研究了Ti3C2Tx/(n/p)-GaN van der Waals异质结。用紫外光电子能谱证实了Ti3C2Tx/(n/p)-GaN肖特基结，其功函数为≈4.2 eV。基于Ti3C2Tx/(n/p)-GaN肖特基结，研制了高速光电探测器和稳定的橙色发光二极管(LED)。Ti3C2Tx/n-GaN异质结光探测器在波长365 nm、功率密度为96.9µW cm−2的光源下，具有较短的上升时间(60ms)和衰减时间(20ms)，高响应度(44.3mA W−1)和开关比(≈11300)。在4~22 V的偏压下，Ti3C2TX/p-GaN异质结发光二极管保持稳定的橙色发光，在22 V下的EL光谱的色度坐标和色温分别为0.4541、0.4432和2953K。作者认为，这项工作为MXene在光电子器件中的应用提供了基础性的见解。
Due to their excellent electrical conductivity, high transmittance, and adjustable work function, 2D transition‐metal carbides and nitrides have shown great promise in optoelectronic applications, especially in MXene‐semiconductor devices. In this work, Ti3C2TX/(n/p)‐GaN van der Waals heterostructures are fabricated and studied. The Ti3C2TX/(n/p)‐GaN Schottky junctions are confirmed by ultraviolet photoelectron spectroscopy (UPS) with a work function ≈4.2 eV of Ti3C2TX. Based on the Ti3C2TX/(n/p)‐GaN Schottky junctions, high‐speed photodetectors and stable orange light emitting diodes (LEDs) are fabricated. The Ti3C2TX/n‐GaN heterostructure photodetector shows a short rise time (60 ms) and decay time (20 ms), a high responsivity (44.3 mA W−1) and on/off ratio (≈11300) under a light source of 365 nm wavelength and 96.9 µW cm−2power density. And the Ti3C2TX/p‐GaN heterostructure LED remains a stable orange light emission under bias voltage from 4 to 22 V. The chromaticity coordinates and color temperature of EL spectrum under 22 V are further calculated to be 0.4541, 0.4432, and 2953 K, respectively. The authors believe that this work provides fundamental insight into the applications of MXene in optoelectronic devices.