New Diode-Triggered Silicon-Controlled Rectifier for Robust Electrostatic Discharge Protection at High Temperatures
New Diode-Triggered Silicon-Controlled Rectifier for Robust Electrostatic Discharge Protection at High Temperatures
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DOI：
10.1109/ted.2019.2900052
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发表时间：
2019-04-01
影响因子：
3.1
通讯作者：
Liou, Juin J.
中科院分区：
文献类型：
--
作者：
Hou, Fei;Liu, Jizhi;Liou, Juin J.
二极管触发硅控整流器（DTSCR）是低压集成电路静电放电（ESD）保护的重要器件，其触发电压由二极管串的正向开通电压和金属互连寄生电阻上的压降决定。对于传统的DTSCR，寄生电阻上的压降通常可以忽略不计，因此其触发电压主要由二极管串的正向开通电压决定，由于继承的负温度系数，该电压随着温度的升高而降低。在本文中，提出了一种称为热稳定 DTSCR (TSDTSCR) 的改进型新颖器件，可在高温下提供改进的 ESD 保护稳定性。这是通过更改和优化 3D 布局来完成的。特别是，实验结果表明，TSDTSCR的触发压降在125℃时可降低至13.5%，而DTSCR的触发压降为27.18%。在很宽的温度范围内，TSDTSCR 的保持电压也比 DTSCR 更稳定。
The diode-triggered silicon-controlled rectifier (DTSCR) is an important device for the electrostatic discharge (ESD) protection of low-voltage integrated circuits, and its trigger voltage is determined by the forward turn-on voltage of diode string and the voltage drops on the parasitic resistors of metal interconnects. For the conventional DTSCR, the voltage drops on the parasitic resistors are often negligible so its triggering voltage is mainly determined by the forward turn-on voltage of diode string, which decreases with increasing temperature due to the inherited negative temperature coefficient. In this paper, an improved and novel device called thermal-stable DTSCR (TSDTSCR) is proposed to offer an improved ESD protection stability at elevated temperatures. This is done by changing and optimizing the 3-D layout. In particular, the experimental results show that the trigger voltage drop of the TSDTSCR can be reduced to 13.5% at 125 degrees C, comparing to 27.18% of the DTSCR. The holding voltage of the TSDTSCR is also more stable than that of the DTSCR over a wide range of temperatures.