Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes
Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes
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DOI：
10.1103/physrevb.103.l161411
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发表时间：
2021-04-29
影响因子：
3.7
通讯作者：
Kim, Philip
中科院分区：
文献类型：
--
作者：
Joe, Andrew Y.;Jauregui, Luis A.;Kim, Philip
我们报告了来自原子比对过渡金属二分法（TMD）异质结构的电气可调节旋转单线和三重态激子发射。在0度和60度异质结构中对这些状态的观察提供了堆叠方向的自由度，以使层间激子中极化切换。我们确认使用磁场来测量有效激子G因子的发光激子的自旋构型。跨TMD异质结构的层间隧穿电流可在此原子薄的P-N结中产生单线和三重态激子发射。我们通过静电大门和激发能力证明了单线和三重激动剂光致发光之间的可调性。通过调整门和层间偏置电压，可以以10：1的比例切换单线和三重态的电致发光。因此，原子上薄的TMD异质结构发光二极管为光电设备提供了可以独立配置旋转和山谷量子状态的光电设备的途径。
We report electrically tunable spin singlet and triplet exciton emission from atomically aligned transition metal dichalcogenide (TMD) heterostructures. The observation of these states in both 0 degrees and 60 degrees heterostructures provides the stacking orientation degree of freedom for polarization switching in interlayer excitons. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g factors. The interlayer tunneling current across the TMD heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin p-n junction. We demonstrate tunability between the singlet and triplet exciton photoluminescence via electrostatic gates and excitation power. By tuning the gates and interlayer bias voltage, the electroluminescence of the singlet and triplet can be switched with ratios of 10:1. Atomically thin TMD heterostructure light-emitting diodes thus enable a route for optoelectronic devices that can configure spin and valley quantum states independently.