Sub-15 nm nanoimprint molds and pattern transfer
Sub-15 nm nanoimprint molds and pattern transfer
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DOI：
10.1116/1.3264670
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发表时间：
2009-11-01
影响因子：
1.4
通讯作者：
Williams, R. Stanley
中科院分区：
文献类型：
--
作者：
Morecroft, Debbie;Yang, Joel K. W.;Williams, R. Stanley
这项工作解决了在制造亚10 nm尺寸的特征、致密(亚15 nm半间距)任意图案纳米压印模具以及使用纳米压印进行模具的图案转移方面的挑战。采用优化的电子束光刻工艺，使用倍半硅氧烷(HSQ)抗蚀剂制作模具。研究了两种不同的模具加工路线：(1)直接使用硅衬底上的HSQ图案进行纳米压印；(2)将模具上的HSQ图案转移到下面的硅衬底中，以增加压印前图案的纵横比。在纳米压痕之后，进行了剥离，以证明该图案可以转移到功能材料中。讨论了两种模具加工路线的区别。结果表明，在整个工艺流程中，为了在功能材料中创建低于15 nm的半间距图案，分辨率传递非常出色。
This work addresses the challenges in fabricating sub-10 nm sized features, dense (sub-15 nm half-pitch) arbitrary-pattern nanoimprint molds, as well as pattern transfer of the molds using nanoimprint. The molds were fabricated using an optimized electron-beam lithography process with hydrogen silsesquioxane (HSQ) resist. Two different mold-processing routes were investigated: (1) HSQ patterns on top of a silicon substrate were directly used for nanoimprint and (2) the HSQ patterns on the mold were transferred into the underlying silicon substrate to increase the aspect ratio of the patterns prior to imprint. After the nanoimprint, lift-off was carried out to demonstrate that the pattern could be transferred into functional materials. The difference between the two mold-processing routes is discussed. The results show excellent resolution transfer throughout the process flow to create sub-15 nm half-pitch patterns in functional materials.