Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism
Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism
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DOI：
10.1016/j.mssp.2003.07.008
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发表时间：
2003-10
影响因子：
4.1
通讯作者：
J. Zhao;F. Matsukura;K. Takamura;D. Chiba;Y. Ohno;K. Ohtani;H. Ohno
中科院分区：
文献类型：
--
作者：
J. Zhao;F. Matsukura;K. Takamura;D. Chiba;Y. Ohno;K. Ohtani;H. Ohno
用固体源分子束外延技术在GaAs衬底上生长了周期为4的CrSb（1 ML）/GaAs（5 nm）多层膜。反射高能电子衍射揭示了整个多层结构的生长锌的特性。高分辨率的横截面透射电子显微镜也表明，多层膜的晶体结构是锌的，在界面处没有位错。室温铁磁性的存在下证实了磁化测量。
CrSb (1ML)/GaAs (5nm) multilayers with period up to 4 have been grown on GaAs substrates by solid-source molecular-beam epitaxy at 250°C. Reflection high-energy electron diffraction reveals zincblende characteristics throughout the growth of multilayer structures. High-resolution cross-sectional transmission electron microscopy also indicates that the crystal structure of the multilayers is zincblende and with no dislocations at the interfaces. The presence of room-temperature ferromagnetism is confirmed by magnetization measurements.