Growth of SixGe1-x (x \fallingdotseq0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
Growth of SixGe1-x (x \fallingdotseq0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
复制标题
利用晶体-溶液界面的原位监测生长具有均匀成分的 SixGe1-x (x fallingdotseq0.15) 块状晶体
DOI：
10.1143/jjap.40.4141
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发表时间：
2001
影响因子：
1.5
通讯作者：
K. Nakajima
中科院分区：
文献类型：
--
作者：
N. Usami;Y. Azuma;T. Ujihara;G. Sazaki;S. Miyashita;Y. Murakami;K. Nakajima
采用多组分区熔法生长了成分均匀的SixGe_（1-x）（x\fallingdotseq_（0.15））块体晶体。利用该系统，从界面的非线性上移作为生长时间的函数来评估生长速率的动态变化。基于监测，尝试平衡晶体的生长速率与晶体的提拉速率，这导致生长界面的上移的抑制。因此，晶体在生长方向上的组成均匀性得到显著改善。
A new growth system, which allows in situ monitoring of the crystal-solution interface, was developed and applied to grow SixGe1-x (x\fallingdotseq0.15) bulk crystal with uniform composition by the multicomponent zone-melting method. By utilizing the system, the dynamical change of the growth rate was evaluated from the nonlinear upward shift of the interface as a function of the growth time. Based on the monitoring, an attempt was made to balance the pulling rate of the ampoule with the growth rate of the crystal, which led to the suppression of the upward shift of the growth interface. Consequently, the compositional uniformity of the crystal in the growth direction was markedly improved.