Heat transfer and thermal stress analysis in the new generation quasi-monolithic integration technology (QMIT)
Heat transfer and thermal stress analysis in the new generation quasi-monolithic integration technology (QMIT)
复制标题
新一代准单片集成技术（QMIT）中的传热和热应力分析
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
G. Kompa
中科院分区：
文献类型：
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作者：
M. Joodaki;T. Senyildiz;G. Kompa
使用三维有限元模拟器对新一代准单片集成技术（QMIT）进行静态传热和热应力分析。为了确认模拟结果，使用了白光干涉测量以及 Peltier 元件和 Pt 温度传感器。事实证明，在有源器件背面使用 200 /spl mu/m 电镀金散热器和金刚石填充聚酰亚胺，分别可以实现 11/spl deg/C/W 和 8.5/spl deg/C/W 的热阻。这有望成功实现包含使用新型 QMIT 的功率有源器件的高频电路。仿真和测量结果表明，与早期概念相比，新一代 QMIT 的热应力大大降低，从而极大地提高了封装的使用寿命。计算结果与测量结果之间存在显着的一致性。
Static heat transfer and thermal stress analysis for the new generation quasi-monolithic integration technology (QMIT) have been performed using a three-dimensional finite element simulator. To confirm the simulation results, white-light interferometry measurement along with a Peltier element and a Pt-temperature sensor have been used. It has been shown that thermal resistances of 11/spl deg/C/W and 8.5/spl deg/C/W are possible using 200 /spl mu/m electroplated gold heat-spreader and diamond-filled polyimide on the backside of the active device, respectively. This promises successful realization of the high frequency circuits containing power active devices using the novel QMIT. Simulation and measurement results demonstrate a great decrease of thermal stress in the new generation QMIT in comparison to the earlier concept which extremely improves life-time of the packaging. A remarkable agreement between calculated and measured results was found.