Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors
Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors
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DOI：
10.1063/1.3665625
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发表时间：
2011-12
影响因子：
4
通讯作者：
Lei Shao;Meng Zhang;A. Banerjee;P. Bhattacharya;K. Pipe
中科院分区：
文献类型：
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作者：
Lei Shao;Meng Zhang;A. Banerjee;P. Bhattacharya;K. Pipe
使用集成叉指换能器（IDT），我们展示了发射表面声波（SAW）的AlGaN/GaN高电子迁移率晶体管（HEMT）在一定的偏压条件下，通过动态屏蔽的HEMT垂直场调制的二维电子气。我们表明，可以检测到一个强大的SAW信号，如果IDT的几何形状复制的HEMT电极的几何形状，在RF偏置施加。除了在栅源和漏源调制过程中表征SAW发射外，我们还演示了HEMT的SAW检测。集成HEMT-IDT结构可以实现外延退化的实时评估以及SAW的高速放大检测。
Using integrated interdigital transducers (IDTs), we demonstrate the emission of surface acoustic waves (SAWs) by AlGaN/GaN high electron mobility transistors (HEMTs) under certain bias conditions through dynamic screening of the HEMTs vertical field by modulation of its two-dimensional electron gas. We show that a strong SAW signal can be detected if the IDT geometry replicates the HEMT electrode geometry at which RF bias is applied. In addition to characterizing SAW emission during both gate-source and drain-source modulation, we demonstrate SAW detection by HEMTs. Integrated HEMT-IDT structures could enable real-time evaluation of epitaxial degradation as well as high-speed, amplified detection of SAWs.