Thin film phosphor prepared by physical vapor deposition for field emission display application
Thin film phosphor prepared by physical vapor deposition for field emission display application
复制标题
物理气相沉积制备薄膜荧光粉用于场致发射显示应用
DOI：
10.1116/1.589282
复制
发表时间：
1997
影响因子：
1.4
通讯作者：
M. Oh
中科院分区：
文献类型：
--
作者：
Yun‐Hi Lee;M. Song;B. Ju;D. Shin;M. Oh
我们采用射频磁控溅射法制备了ZnO：Zn薄膜，采用电子束蒸发法制备了ZnS：Pr，Ce薄膜，用于彩色场发射显示。此外，为了研究荧光体膜上的表面导电层对发射特性的影响，我们制备了具有2-6 nm厚的Sn掺杂的In 2 O3膜的附加导电层的层状结构。溅射ZnO：Zn（250 nm）薄膜的阴极荧光光谱显示出两个宽峰，分别位于540和600 nm附近。ZnS：Pr，Ce，F薄膜的光谱特征为白色光谱，覆盖了整个可见光波长。与我们的没有表面导电层的磷光体膜相比，在ZnO和ZnS磷光体上的氧化铟锡的附加表面层的效果之一是光谱向更短波长以及低电压发射的偏移。
We fabricated very thin ZnO:Zn film using rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color field emission display application. Also, in order to investigate the influence of surface conductive layer onto the phosphor films upon the emission characteristics, we prepared the layered structures having an additional conducting layer of 2–6-nm-thick Sn-doped In2O3 film. Cathodoluminescence spectrum of sputtered ZnO:Zn (250 nm) film shows two broad peaks centered around 540 and 600 nm, respectively. The spectra characteristics of ZnS:Pr,Ce,F films show white spectrum that covered a whole visible wavelength. One of the effects of an additional surface layer of indium tin oxide on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength as well as low voltage emission, as compared to our phosphor film without the surface conductive layer.