Semiconducting silicide‐silicon heterojunction elaboration by solid phase epitaxy
Semiconducting silicide‐silicon heterojunction elaboration by solid phase epitaxy
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固相外延制备半导体硅化物-硅异质结
DOI：
10.1063/1.102313
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发表时间：
1989
影响因子：
4
通讯作者：
J. Derrien
中科院分区：
文献类型：
--
作者：
N. Cherief;C. D'anterroches;R. Cinti;T. Tan;J. Derrien
在Si（111）衬底上成功地生长了半导体β FeSi_2。事实证明，在超高真空条件下，固相外延温度可以降低到± 800 K，此时只有β FeSi 2相稳定。通过各种表面敏感技术如低能电子衍射、俄歇电子能谱和紫外光电子能谱原位监测二硅化物的形成。通过透射电子衍射和显微镜（包括高分辨率横截面图像）确定外延关系。结果表明，β FeSi 2（110）和（101）晶面平行于Si（111）晶面外延生长。二硅化物-硅异质结显示出原子突变界面。
Semiconducting βFeSi2 has been successfully grown on a Si (111) substrate. It has been proven that under ultrahigh vacuum conditions, the solid phase epitaxy temperature can be lowered to ∼800 K, where only the βFeSi2 phase is stabilized. The disilicide formation was monitored in situ by various surface‐sensitive techniques such as low‐energy electron diffraction, Auger electron spectroscopy, and ultraviolet photoelectron spectroscopy. The epitaxial relationships were ascertained by transmission electron diffraction and microscopy including high‐resolution cross‐sectional image. The results show the epitaxy of βFeSi2 (110) and (101) planes parallel to the Si (111) plane. The disilicide‐silicon heterojunction displays an atomically abrupt interface.