A simple model to determine multiplication and noise in avalanche photodiodes
A simple model to determine multiplication and noise in avalanche photodiodes
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DOI：
10.1063/1.367111
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发表时间：
1998-03-15
影响因子：
3.2
通讯作者：
Robson, PN
中科院分区：
文献类型：
--
作者：
Ong, DS;Li, KF;Robson, PN
使用简单模型计算了 1.0、0.5、0.1 和 0.05 μm GaAs p(+)-i-n(+) 二极管中电子和空穴引发倍增的雪崩倍增和噪声，该模型包含随机生成的电离路径长度 (RPL) 和硬阈值死区。我们发现，即使对于最短的结构，使用该 RPL 模型获得的均值乘法也与从分析能带结构蒙特卡罗 (MC) 模型获得的均值乘法非常一致，该模型结合了软阈值效应。然而，它预测较短器件的雪崩噪声会略低。与相对复杂的 MC 模型相关的更真实的分布函数相比，这种差异是由于高电场下硬阈值 RPL 模型的电离路径长度概率分布更窄和死区更大造成的。 (C) 1998 年美国物理研究所。
Avalanche multiplication and noise in 1.0, 0.5, 0.1, and 0.05 mu m GaAs p(+)-i-n(+) diodes have been calculated for both electron and hole initiated multiplication using a simple model which incorporates a randomly-generated ionization path length (RPL) and a hard-threshold dead space. We find that the mean multiplication obtained using this RPL model is in excellent agreement, even for the shortest structure, with that obtained from an analytical-band structure Monte Carlo (MC) model, which incorporates soft-threshold effects. However, it predicts slightly lower avalanche noise in the shorter devices. This difference results from the narrower ionization path length probability distribution and larger dead space of the hard-threshold RPL model at high electric fields as compared to the more realistic distribution function associated with the relatively sophisticated MC model. (C) 1998 American Institute of Physics.