Influence of trapping on silicon microstrip detector design and performance
Influence of trapping on silicon microstrip detector design and performance
复制标题
捕获对硅微带探测器设计和性能的影响
DOI：
10.1109/nssmic.2001.1009703
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
M. Mikuž
中科院分区：
文献类型：
--
作者：
G. Kramberger;V. Cindro;I. Mandić;M. Mikuž
新的系统测量的有效载流子捕获时间被用来作为输入模拟辐照硅条探测器的操作。研究了偏压、磁场、辐照粒子类型、能量密度和探测器设计对电荷收集效率的影响。据观察，在标准n-硅材料上处理的具有n/sup +/条带的辐照探测器比具有p/sup +/条带的辐照探测器性能更好。在/spl Phi//sub eq/ = 2 /spl times/ 10/sup 14/ cm/sup-2/时，电压远高于V/sub FD/时，差异约为10%，电压较低时差异甚至更大。预测了跨带的不同轨道路径的CCE的百分之几的差异。有效洛仑兹角被认为是独立的照射水平。由于电荷捕获，在相邻的条带上也出现不可忽略的电荷量。研究了探测器厚度和条带宽度对感应电荷的影响。
New systematic measurements of effective carrier trapping times were used as an input to simulation of irradiated silicon strip detector operation. Charge collection efficiency (CCE) dependence on bias voltage, magnetic field, irradiation particle type, fluence and detector design was investigated. It was observed, that irradiated detectors processed on standard n-silicon material with n/sup +/ strips performed better than those with p/sup +/ strips. At /spl Phi//sub eq/ = 2 /spl times/ 10/sup 14/ cm/sup -2/ the difference is around 10% at voltages well above V/sub FD/ and even larger for lower voltages. A few percent difference in CCE for different track paths across the strip is predicted. Effective Lorentz angle was found to be independent on irradiation level. A non-negligible amount of charge appears also on neighboring strips as a consequence of charge trapping. The influence of detector thickness and strip width on induced charge was also studied.