Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect
Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect
复制标题
杂质光伏效应增强硅光电探测器的近红外响应度
DOI：
10.1088/1674-1056/24/4/048501
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发表时间：
2015
影响因子：
1.7
通讯作者：
Zhou Lang
中科院分区：
文献类型：
--
作者：
Yuan Ji-Ren;Huang Hai-Bin;Deng Xin-Hua;Liang Xiao-Jun;Zhou Nai-Gen;Zhou Lang
用数值方法研究了利用杂质光伏效应的硅光探测器的近红外响应率。在约1200nm光波长下，响应度的提高可达0.358 A/W，相应的量子效率为41.1%。响应性增强的原因是由于亚带隙光子的吸收，导致载流子从杂质能级跃迁到导带。结果表明，IPV效应可能为提高光电探测器的响应度提供了一种普遍的途径。
The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic (IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.