Density-dependent electronic structure of zinc-blende-type MnAs dots on GaAs(001) studied by in situ photoemission spectroscopy
Density-dependent electronic structure of zinc-blende-type MnAs dots on GaAs(001) studied by in situ photoemission spectroscopy
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DOI：
10.1103/physrevb.70.233305
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发表时间：
2004-12
影响因子：
3.7
通讯作者：
J. Okabayashi;M. Mizuguchi;K. Ono;M. Oshima;A. Fujimori;H. Kuramochi;H. Akinaga
中科院分区：
文献类型：
--
作者：
J. Okabayashi;M. Mizuguchi;K. Ono;M. Oshima;A. Fujimori;H. Kuramochi;H. Akinaga
我们报告的密度依赖性的形态和电子结构的锌-x-type的MnAs点使用原位光电子能谱结合分子束外延。透射电子显微镜图像显示，在硫钝化的GaAs（001）表面上的每个点的直径为10 nm的锌-β-型晶体结构。MnAs点的价带光电子能谱与稀磁半导体${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$的价带光电子能谱相似。随着点密度的增加，锌的x-type的MnAs的特征光谱持续，但出现一个弱的费米边缘，这表明作为点之间的渗流或作为少数相的六方MnAs的外观的结果的金属行为。
We report on the density dependence of the morphology and electronic structure of zinc-blende-type MnAs dots using in situ photoemission spectroscopy combined with molecular-beam epitaxy. Transmission electron microscopy images showed the zinc-blende-type crystalline structure of 10-nm diameter for each dot on sulfur-passivated GaAs(001) surface. The valence-band photoemission spectra of the MnAs dots were similar to those of the diluted magnetic semiconductor ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$. With increasing dot density, the characteristic spectra of the zinc-blende-type MnAs persist but a weak Fermi edge appears, suggesting a metallic behavior as a result of percolation between the dots or the appearance of hexagonal MnAs as a minority phase.