Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions
Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions
复制标题
注入 P 型区域上 4H 和 6H-SiC MOSFET 中反转层和积累层电子传输的表征
DOI：
10.1109/16.877161
复制
发表时间：
2000
影响因子：
3.1
通讯作者：
M. White
中科院分区：
文献类型：
--
作者：
V. Vathulya;M. White
碳化硅双注入垂直MOSFET（SiC DIMOS）由于没有高电场角点和与平面IC工艺的兼容性，在大功率开关应用中具有很好的前景。在这项工作中，我们报告的沟道迁移率的行为在4 H和6 H-SiC MOSFET制造的低热预算工艺序列，在注入的p型区域，其镜像的横向载流子输运区的DIMOS设备。与4 H-SiC MOSFET相比，6 H-SiC中的沟道迁移率高一个数量级，这表明尽管4 H-SiC中的上级垂直体导电，但6 H-SiC多型体更适合于制造DMOS结构。此外，累积表面上的沟道迁移率高于倒置表面上获得的值。所观察到的阈值电压和沟道迁移率之间的强相关性是一致的解释由一个修改后的MOSFET电导配方中存在的缓慢衰减的带尾状态向SiC带边缘。
The silicon carbide double implanted vertical MOSFET (SiC DIMOS) is a promising candidate for high power switching applications due to the absence of high electric field corners and compatibility with planar IC technology. In this work, we report on the channel mobility behavior in 4H and 6H-SiC MOSFETs fabricated with a low thermal budget process sequence, on implanted p-type regions which mirror the lateral carrier transport region in the DIMOS device. Channel mobilities are higher by an order of magnitude in 6H-SiC compared to 4H-SiC MOSFET's suggesting the 6H-SiC polytype is better suited for fabricating the DIMOS structure in spite of the superior vertical bulk conduction in 4H-SiC. Moreover, channel mobility on accumulated surfaces is higher than values obtained on inverted surfaces. A strong correlation between the observed threshold voltages and channel mobilities is consistently explained by a modified MOSFET conductance formulation in the presence of slowly decaying bandtail states toward the SiC band edges.