Development of a parasitic capacitance reduction process by forming embedded dielectric structures

Development of a parasitic capacitance reduction process by forming embedded dielectric structures
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通过形成嵌入式介电结构开发寄生电容降低工艺

DOI:
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发表时间:
2022
期刊:
影响因子:
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通讯作者:
and Gen Hashigushi
and Gen Hashigushi
中科院分区:
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文献类型:
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作者:
Yuki Yamamoto;Yasushi Shibata;and Gen Hashigushi

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