Nanopatterning of Cu-Ligated Mercaptoalkanoic Acid Multilayers on Si Substrates via Atomic Force Lithography
Nanopatterning of Cu-Ligated Mercaptoalkanoic Acid Multilayers on Si Substrates via Atomic Force Lithography
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DOI：
10.1021/acs.jpcc.9b10364
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发表时间：
2020-01-09
影响因子：
3.7
通讯作者：
Mullen，Thomas J.
中科院分区：
文献类型：
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作者：
Patron，Alexandra M.;Bramer，Alisha M.;Mullen，Thomas J.
化学自组装作为生成纳米级结构和器件的工具引起了人们的极大兴趣。有机硅烷自组装单层 (SAM) 因其能够在具有不同化学功能的各种基材上组装而受到特别关注。纳米剃须是一种原子力光刻技术，已被证明是一种生成有机硅烷 SAM 纳米图案的方法。然而，这种方法需要极高的力设定点，这会迅速使原子力显微镜尖端变钝并降低所得纳米图案的分辨率。在这项工作中，我们利用铜连接的巯基十六烷酸（MHDA）多层来规避这一限制。首先，将 10-十一烯基三氯硅烷 (UTS) SAM 组装到 Si 基板上，并将 UTS SAM 的末端烯烃基团氧化为羧基。随后，通过 Cu2+ 离子和 MHDA 分子的顺序沉积来组装 Cu 连接的 MHDA 多层。氧化的 UTS SAM 和铜连接的 MHDA 多层之间的界面充当纳米剃须的天然低力断点。我们证明所得到的纳米图案可以用作制造金属纳米结构的化学抗蚀剂。
Chemical self-assembly has garnered tremendous interest as a tool for generating nanometer-scale structures and devices. Organosilane self-assembled monolayers (SAMs) are of particular interest because of their ability to assemble on a wide range of substrates with varied chemical functionalities. Nanoshaving, an atomic force lithographic technique, has been demonstrated as a method to generate nanopatterns of organosilane SAMs. However, this method requires extremely high force setpoints, which rapidly dulls atomic force microscopy tips and degrades the resolution of the resulting nanopattern. In this work, we utilize Cu-ligated mercaptohexadecanoic acid (MHDA) multilayers to circumvent this limitation. Initially, a 10-undecenyltrichlorosilane (UTS) SAM is assembled onto a Si substrate, and the terminal olefin groups of the UTS SAM are oxidized to carboxyl groups. Subsequently, a Cu-ligated MHDA multilayer is assembled via the sequential deposition of Cu2+ions and MHDA molecules. The interface between the oxidized UTS SAM and Cu-ligated MHDA multilayer serves as a natural low force breakpoint for nanoshaving. We demonstrate that the resulting nanopatterns can function as a chemical resist to fabricate metal nanostructures.