Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
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DOI：
10.1063/1.4994241
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发表时间：
2018-01
影响因子：
4
通讯作者：
Yuta Abe;T. Umeda;M. Okamoto;R. Kosugi;S. Harada;M. Haruyama;W. Kada;O. Hanaizumi;S. Onoda;T. Ohshima
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文献类型：
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作者：
Yuta Abe;T. Umeda;M. Okamoto;R. Kosugi;S. Harada;M. Haruyama;W. Kada;O. Hanaizumi;S. Onoda;T. Ohshima
我们提出了嵌入在4 H-SiC金属氧化物半导体场效应晶体管（MOSFET）的单光子源（SPS）。它们形成于湿氧化C面4 H-SiC MOSFET的SiC/SiO2界面区，而在其他C面和Si面MOSFET中没有发现。在550 ~ 750 nm范围内观察到了它们明亮的室温光致发光（PL），并揭示了可变的多峰结构以及可变的峰位移。我们的特点是各种各样的PL光谱的局部原子结构在界面处的不可避免的变化。它们的极化依赖性表明它们形成在界面的SiC侧。我们还证明，它是可能的开关SPS的MOSFET的偏置电压。
We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.