Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature
Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature
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DOI：
10.1109/jstqe.2002.804250
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发表时间：
2002-09-01
影响因子：
4.9
通讯作者：
Bimberg, D
中科院分区：
文献类型：
--
作者：
Borri, P;Langbein, W;Bimberg, D
我们对 InGaAs 量子点 (QD) 在 10 K 至 295 K 温度范围内的激子弛豫和移相进行了广泛的实验研究。QD 嵌入电泵浦半导体光放大器的有源区域中。使用灵敏的外差检测技术对点基态跃迁进行超快四波混频和差分透射光谱。布居弛豫动力学对移相的重要性被确定为注入电流和温度的函数。由于载流子-声子散射以及与注入载流子的库仑相互作用，超过 150 K 的移相过程比布居弛豫快得多。仅在低温下（
We present an extensive experimental study of the exciton relaxation and dephasing in InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are embedded in the active region of an electrically pumped semiconductor optical amplifier. Ultrafast four-wave mixing and differential transmission spectroscopy on the dot ground-state transition are performed with a sensitive heterodyne detection technique. The importance of the population relaxation dynamics to the dephasing is determined as a function of injection current and temperature. Above 150 K dephasing processes much faster than the population relaxation are present, due to both carrier-phonon scattering and Coulomb interaction with the injected carriers. Only at low temperatures (