Retention of deuterium implanted in hot-pressed beryllium
Retention of deuterium implanted in hot-pressed beryllium
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DOI：
10.1016/0022-3115(90)90123-5
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发表时间：
1990-12
影响因子：
3.1
通讯作者：
H. Kawamura;E. Ishituka;A. Sagara;K. Kamada;H. Nakata;M. Saito;Y. Hutamura
中科院分区：
文献类型：
--
作者：
H. Kawamura;E. Ishituka;A. Sagara;K. Kamada;H. Nakata;M. Saito;Y. Hutamura
在室温下，以9.3 × 1018D+2/m2s的通量注入2.5 keV/原子的铍样品，利用1.5 MeV4He束流的弹性反冲探测技术（ERD）测量了氘的保留量与入射通量的关系。结果表明，植入体的平均深度约为0.06 μm，符合理论平均投影范围，饱和浓度为0.36 D/Be，饱和通量约为4 × 1022D/m2。注入样品的等时退火表明，氘在150℃以下和400℃左右的温度下分两个阶段热释放。
Beryllium samples were implanted with 2.5 keV/atom deuterium with a flux of 9.3 × 1018D+2/m2s at room temperature, and the amount of deuterium retained as a function of incident fluence was measured using the elastic recoil detection technique (ERD) with a 1.5 MeV4He beam. From the results obtained, it was found that the mean depth of the implant is about 0.06 μm and agrees with the theoretical mean projection range, and the saturation concentration is 0.36 D/Be at the saturation fluence of about 4 × 1022D/m2. Isochronal annealing of the implanted samples showed that deuterium is thermally released in two stages, namely at temperatures below 150°C and around 400°C.