Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures

Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures
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DOI：
10.1021/acsaelm.0c00083
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发表时间：
2020-03
期刊：
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影响因子：
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通讯作者：
Badari Narayana Rao;S. Yasui;Yefei Han;Yosuke Hamasaki;T. Katayama;T. Shiraishi;T. Kiguchi;M. Itoh-M
Badari Narayana Rao;S. Yasui;Yefei Han;Yosuke Hamasaki;T. Katayama;T. Shiraishi;T. Kiguchi;M. Itoh-M
中科院分区：
其他
文献类型：
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作者：
Badari Narayana Rao;S. Yasui;Yefei Han;Yosuke Hamasaki;T. Katayama;T. Shiraishi;T. Kiguchi;M. Itoh-M

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