Raman study of lattice dynamic behaviors in phosphorus-doped ZnO films
Raman study of lattice dynamic behaviors in phosphorus-doped ZnO films
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DOI：
10.1063/1.2182107
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发表时间：
2006-03
影响因子：
4
通讯作者：
Jiandong Ye;S. Gu;S. M. Zhu;S. Liu;Youliao Zheng;R. Zhang;Yue-chun Shi;Qingchao Chen;H. Yu;Y. Ye
中科院分区：
文献类型：
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作者：
Jiandong Ye;S. Gu;S. M. Zhu;S. Liu;Youliao Zheng;R. Zhang;Yue-chun Shi;Qingchao Chen;H. Yu;Y. Ye
用拉曼散射方法研究了金属有机化学气相沉积法生长的ZnO：P外延层中磷诱导的晶格动力学行为。在504、520、655和866 cm −1附近的额外模式归因于由于P掺杂破坏平移对称性而导致的无序激活模式，这得到了w-ZnO晶格动力学的从头计算的支持。在364和478 cm −1附近的两个振动模分别归属于Zn-P和P-O对的局域振动模。输运和振动性质的相关性表明了P掺杂ZnO的复杂掺杂机制和两性性质。另外，2纵光学多声子在1154 cm −1附近的红移可能来源于P掺入引起的ZnO单轴晶格中短程力的变化。
Phosphorus-induced lattice dynamic behaviors in ZnO:P epilayers grown by the metalorganic chemical vapor deposition technique have been studied using the Raman scattering method. Additional modes around 504, 520, 655, and 866cm−1 are attributed to the disorder-activated modes due to the breakdown of translational symmetry by P doping, well supported by the reported ab initio calculations of lattice dynamics in w-ZnO. Two modes around 364 and 478cm−1 are assigned to the local vibrational modes of Zn–P and P–O pairs, respectively. The correlation of transport and vibrational properties demonstrates the complex doping mechanism and the amphoteric nature of P dopant in ZnO. In addition, the redshift of 2 longitudinal optical multiphonon around 1154cm−1 is possibly originated from the variation of short-range forces in ZnO uniaxial lattice caused by P incorporation.